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1

80-ps and 4-ns pulse-pumped gains in a GaP-AlGaP semiconductor Raman amplifier

S. Saito, K. Suto, T. Kimura, Jun-Ichi Nishizawa

Journal:

IEEE Photonics Technology Letters

Year:

2004

Language:

english

File:

PDF, 173 KB

english, 2004

2

Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy

Nugraha, Osamu Itoh, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 476 KB

english, 1996

3

Genetic Determinants of Sable and Umbrous Coat Color Phenotypes in Mice

Jun-ichi Suto, Kenji Sekikawa

Journal:

Pigment Cell & Melanoma Research

Year:

2003

Language:

english

File:

PDF, 404 KB

english, 2003

4

Photoluminescence and Photocapacitance of Se Vapor-Pressure-Dependent Deep Levels in Ga-Diffused Layers Formed in p-Type ZnSe Substrates

Sakurai, Fumitoshi, Suto, Ken, Sanda, Seishi, Nishizawa, Jun-ichi

Journal:

Journal of The Electrochemical Society

Year:

2002

Language:

english

File:

PDF, 63 KB

english, 2002

5

Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum

Otsuka, Nobuyuki, Oyama, Yutaka, Kikuchi, Hideyuki, Nishizawa, Jun-ichi, Suto, Ken

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 483 KB

english, 1998

6

Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

Yasuda, Arata, Suto, Ken, Takahashi, Yatsuhiro, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 448 KB

english, 2014

7

Mid-infrared transmission imaging and spectroscopy with PbSnTe laser diodes grown with stoichiometry-controlled liquid-phase epitaxy

Yasuda, Arata, Sasaki, Tetsuo, Suto, Ken, Nishizawa, Jun-ichi

Journal:

Infrared Physics & Technology

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

8

A comparative study of THz spectra

NISHIZAWA, Jun-ichi, SUTO, Ken, SASAKI, Tetsuo, TANNO, Takenori

Journal:

Proceedings of the Japan Academy Series B Physical and Biological Sciences

Year:

2005

Language:

english

File:

PDF, 795 KB

english, 2005

9

[AIP EXOPLANETS AND DISKS: THEIR FORMATION AND DIVERSITY: Proceedings of the International Conference - Kailua-Kona (Hawaii) (9–12 March 2009)] AIP Conference Proceedings - HiCIAO: A High-contrast Instrument for the Next Generation Subaru Adaptive Optics

Suzuki, Ryuji, Tamura, Motohide, Suto, Hiroshi, Morino, Jun-ichi, Hashimoto, Jun, Kudo, Tomoyuki, Kandori, Ryo, Murakami, Naoshi, Nishikawa, Jun, Ukita, Nobuharu, Takami, Hideki, Guyon, Olivier, Nishi

Year:

2009

Language:

english

File:

PDF, 1.74 MB

english, 2009

10

ChemInform Abstract: Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH3)3Al/ (CH3)3Ga/AsH3.

Yutaka Oyama, Hiroshi Watanabe, Fumio Matsumoto, Jun-ichi Nishizawa, Ken Suto

Journal:

Year:

2000

File:

PDF, 30 KB

2000

11

ChemInform Abstract: Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped n-GaAs Prepared by Intermittent Injection of (CH3)3Ga/AsH3.

Yutaka Oyama, Fumio Matsumoto, Hiroshi Watanabe, Ken Suto, Jun-ichi Nishizawa

Journal:

Year:

2002

Language:

english

File:

PDF, 32 KB

english, 2002

12

Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure

Nugraha, Ken Suto, Osamu Itoh, Jun-ichi Nishizawa, Yasutoshi Yokota

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 423 KB

english, 1996

13

Heat treatment of gallium phosphide

Jun-ichi Nishizawa, Yasuo Okuno, Ken Suto, Toshio Sato, Shigenobu Yamokoshi

Journal:

Solid State Communications

Year:

1974

Language:

english

File:

PDF, 201 KB

english, 1974

14

Increase of GaP green LED efficiency with pre-annealing of the substrate

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

15

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 331 KB

english, 2003

16

Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Arata Yasuda, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

17

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 203 KB

english, 2003

18

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

19

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Takeo Ohno, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 266 KB

english, 2003

20

Diffusion of nonstoichiometric defects in n-GaP crystals

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

21

THz imaging of nucleobases and cancerous tissue using a GaP THz-wave generator

Jun-ichi Nishizawa, Tetsuo Sasaki, Ken Suto, Tetsuya Yamada, Tadao Tanabe, Takenori Tanno, Takashi Sawai, Yasuhiro Miura

Journal:

Optics Communications

Year:

2005

Language:

english

File:

PDF, 513 KB

english, 2005

22

THz transmittance measurements of nucleobases and related molecules in the 0.4- to 5.8-THz region using a GaP THz wave generator

Jun-ichi Nishizawa, Tetsuo Sasaki, Ken Suto, Tadao Tanabe, Kyosuke Saito, Tetsuya Yamada, Tomoyuki Kimura

Journal:

Optics Communications

Year:

2005

Language:

english

File:

PDF, 577 KB

english, 2005

23

Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 459 KB

english, 2004

24

Terahertz dichroism of MBBA liquid crystal on rubbed substrate

Jun-ichi Nishizawa, Tetsuya Yamada, Tetsuo Sasaki, Tadao Tanabe, Toshimasa Wadayama, Takenori Tanno, Ken Suto

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 168 KB

english, 2006

25

Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 327 KB

english, 2005

26

Be doping in molecular layer epitaxy of GaAs

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

27

Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 509 KB

english, 2005

28

Dislocation-free large area InP ELO layers by liquid phase epitaxy

Toshio Kochiya, Yutaka Oyama, Toshihiro Kimura, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 709 KB

english, 2005

29

Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation

Yutaka Oyama, Tadao Tanabe, Fumikazu Sato, Atsushi Kenmochi, Jun-ichi Nishizawa, Tetsuo Sasaki, Ken Suto

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 474 KB

english, 2008

30

Terahertz vibrational spectra of metallocene

Jun-ichi Nishizawa, Takenori Tanno, Tadao Tanabe, Ken Suto

Journal:

Journal of Organometallic Chemistry

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

31

Terahertz wave generation from GaSe crystals and effects of crystallinity

Atsushi Kenmochi, Tadao Tanabe, Yutaka Oyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Physics and Chemistry of Solids

Year:

2008

Language:

english

File:

PDF, 306 KB

english, 2008

32

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

Jun-ichi Nishizawa, Akihiko Murai, Hiroki Makabe, Osamu Ito, Tomoyuki Kimura, Ken Suto, Yutaka Oyama

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 276 KB

english, 2004

33

Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Kazuyuki Saito, Ken Suto, Jun-ichi Nishizawa

Journal:

Thin Solid Films

Year:

2004

Language:

english

File:

PDF, 443 KB

english, 2004

34

Traveling solvent growth of ZnSe1−xTex and BeyZn1−ySe1−xTex using tellurium solution

Kenji Maruyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

35

Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5×1020 cm−3 prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum

Yutaka Oyama, Jun-ichi Nishizawa, Kohichi Seo, Ken Suto

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 208 KB

english, 2000

36

ZnSe horizontal traveling solvent growth using selenium solution

Kenji Maruyama, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 169 KB

english, 2000

37

X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum

Yutaka Oyama, Jun-ichi Nishizawa, Kohichi Seo, Ken Suto

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 199 KB

english, 2000

38

Growth of Pb1−xSnxTe (x≈0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy

. Nugraha, Wataru Tamura, Osamu Itoh, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 318 KB

english, 2000

39

Growth and crystal properties of Tl-doped PbTe crystals grown by Bridgman method under Pb and Te vapor pressure

. Nugraha, Wataru Tamura, Osamu Itoh, Tatsuya Amemiya, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 276 KB

english, 2001

40

Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

Yutaka Oyama, Takayuki Suzuki, Ken Suto, Jun-Ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 652 KB

english, 2001

41

InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure

Atsushi Shimizu, Jun-ichi Nishizawa, Yutaka Oyama, Ken Suto

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 304 KB

english, 2001

42

InP melts: investigation of wetting between boat materials in Bridgman growth

Atsushi Shimizu, Jun-ichi Nishizawa, Yutaka Oyama, Ken Suto

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 167 KB

english, 2002

43

Defects-induced volume deviations in ZnSe

H. Ebe, F. Sakurai, Z.Q. Chen, A. Uedono, B.-P. Zhang, Y. Segawa, K. Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 81 KB

english, 2002

44

Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (0 0 1) InP

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 321 KB

english, 2002

45

Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 1.16 MB

english, 2002

46

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

Yutaka Oyama, Kenji Tezuka, Ken Suto, Jun-Ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

47

Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun-Ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 487 KB

english, 2003

48

Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 185 KB

english, 2003

49

Liquid phase epitaxial p-type ZnSe growth from a Se solution and fabrication of pn junctions with diffused n-type layers

Fumitoshi Sakurai, Mitsutake Motozawa, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 582 KB

english, 1997

50

Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method

Hitoshi Tamura, Ken Suto, Jun-ichi Nishizawa

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 310 KB

english, 2000

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